NCD57090FDWR2G The On Semiconductor NCD57090FDWR2G is an isolated high current gate driver designed for high power applications. It offers robust performance with 6.5A peak output current and 5 kVrms internal galvanic isolation.
Mfr Part #:

NCD57090FDWR2G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NCD57090FDWR2G is an isolated high current gate driver designed for high power applications. It offers robust performance with 6.5A peak output current and 5 kVrms internal galvanic isolation.
Total Stock: 1,939 pcs
$ Price Range: $2.62

NCD57090FDWR2G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
939 pcs
939 pcs On Request 1 On Request On Request On Request On Request On Request

NCD57090FDWR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Approval Agency
Automotive Grade
Common Mode Transient Immunity (Min)
Current
Halogen Free
Industrial Grade
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Number of Channels
Operating Temperature
Propagation Delay tpLH
Pulse Width Distortion (Max)
Rise
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Voltage

NCD57090FDWR2G Description

Short technical summary and product information.

The NCD57090FDWR2G from On Semiconductor is a single-channel, isolated high current IGBT/MOSFET gate driver. It provides 5 kVrms internal galvanic isolation, enhancing system efficiency and reliability in demanding power applications.

 

Key electrical specifications include a high peak output current of +6.5 A/−6.5 A, short propagation delays with accurate matching, and IGBT/MOSFET gate clamping during short circuits. The device supports a wide range of input bias voltage and signal levels from 3.3 V to 20 V. It operates within a temperature range of -40°C to 125°C.

 

This gate driver is available in a wide-body SOIC-8 package and is suitable for surface mount applications. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. Typical applications include motor control, uninterruptible power supplies (UPS), automotive applications, industrial power supplies, and solar inverters.

NCD57090FDWR2G Quick Information

Product Type: Gate Driver
Canonical Name: NCD57090FDWR2G Isolated High Current IGBT/MOSFET Gate Driver
Subcategory: Isolators - Gate Drivers

NCD57090FDWR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NCD57090FDWR2G Estimated Pricing

Qty Low High
1+ $2.62 $2.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

NCD57090FDWR2G Features

  • High peak output current of 6.5A.
  • 5 kVrms internal galvanic isolation.
  • Wide input bias voltage range.
  • Pb-Free and Halogen Free.
  • Surface mount 8-SOIC package.

NCD57090FDWR2G Applications

  • Used in motor control systems.
  • Suitable for UPS applications.
  • Applied in automotive power systems.
  • Ideal for industrial power supplies.
  • Designed for solar inverters.

NCD57090FDWR2G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the peak output current for the NCD57090FDWR2G?

The NCD57090FDWR2G has a high peak output current of +6.5 A/−6.5 A.

What is the galvanic isolation rating of this gate driver?

The NCD57090FDWR2G provides 5 kVrms internal galvanic isolation.

What is the operating temperature range for the NCD57090FDWR2G?

The operating temperature range is -40°C to 125°C.

What package type is the NCD57090FDWR2G supplied in?

The NCD57090FDWR2G is supplied in an 8-SOIC wide-body package.

Is the NCD57090FDWR2G RoHS compliant?

Yes, the NCD57090FDWR2G is RoHS3 Compliant.

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