| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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52,365 pcs
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52365 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
| Common Mode Transient Immunity (Min) | |
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| Halogen Free | |
| Industrial Grade | |
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| Medical Grade | |
| Military Grade | |
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| Propagation Delay tpLH | |
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| Voltage |
The NCD57090CDWR2G from On Semiconductor is a single-channel, isolated high current IGBT/MOSFET gate driver. It provides 5 kVrms internal galvanic isolation, crucial for high system efficiency and reliability in demanding power applications. This device accepts complementary inputs and supports a wide range of input bias voltages and signal levels from 3.3 V to 20 V.
Key electrical features include a high peak output current of +6.5 A/−6.5 A, short propagation delays with accurate matching, and IGBT/MOSFET gate clamping during short circuits. It also offers an active pull-down feature for the gate.
The NCD57090CDWR2G is available in a wide-body SOIC-8 package and is designed for surface mounting. It operates within a temperature range of -40°C to 125°C, making it suitable for various industrial environments. Typical applications include motor control, uninterruptible power supplies (UPS), automotive systems, industrial power supplies, and solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCD57090CDWR2G offers a peak output current of +6.5 A and -6.5 A.
This gate driver provides 5 kVrms internal galvanic isolation.
The operating temperature range is from -40°C to 125°C.
It is supplied in an 8-SOIC (0.295", 7.50mm Width) package.
The device accommodates input bias voltage and signal levels from 3.3 V to 20 V.