| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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62,500 pcs
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62500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCD5702DR2G by On Semiconductor is a high-current, high-performance, stand-alone IGBT gate driver. It is designed for high power applications such as solar inverters, motor control, and uninterruptible power supplies (UPS).
This device offers a cost-effective solution by minimizing the need for external components. Key features include a high output current capability of +4/-6 A at IGBT Miller Plateau Voltages, low output impedance for enhanced IGBT driving, and short propagation delays with accurate matching. It also provides direct interface capabilities for isolated or non-isolated drive configurations.
Protection features are integrated, including Active Miller Clamp to prevent spurious gate turn-on, DESAT protection with programmable delay, and tight UVLO thresholds for bias flexibility. The driver operates with a wide bias voltage range, including negative VEE capability, and features an accurate 5.0 V reference output.
The NCD5702DR2G is available in a 16-SOIC package and is suitable for surface mount applications. It is Pb-Free, Halogen-Free, and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 5.5 V.
The device is available in a 16-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating temperature range is -40°C to 125°C (TA).
The peak output current is +4 A (source) and -6 A (sink) at IGBT Miller plateau voltages.
The propagation delay is typically 7.9 ns and 9.2 ns (nominal values).
The driver is designed for IGBT gates.
The input type is inverting.