NCD57000DWR2G

The NCD57000DWR2G from On Semiconductor is a high-current, single-channel IGBT gate driver featuring internal galvanic isolation. Designed for high power applications, it enhances system efficiency and reliability. This driver provides complementary inputs, open-drain FAULT and Ready outputs, an active Miller clamp, and DESAT protection with programmable delay. It accommodates both 3.3 V and 5 V input signals and offers a wide bias voltage range, including negative voltage capability down to -9 V.

The NCD57000DWR2G delivers a high current output of +4 A / -6 A at IGBT Miller plateau voltages, with low output impedance for enhanced IGBT driving. It boasts short propagation delays with accurate matching and includes features like soft turn-off during IGBT short circuit and IGBT gate clamping. The device is available in a wide-body SOIC-16 package, ensuring 8 mm creepage distance for reinforced safety insulation requirements.

Key electrical specifications include a 24V operating voltage and a wide operating temperature range of -40°C to 125°C. It provides over 5 kVrms galvanic isolation, meeting UL1577 requirements, and has a working voltage capability of over 1200 V per VDE0884-11. The driver is suitable for applications such as solar inverters, motor control, uninterruptible power supplies (UPS), industrial power supplies, and welding.

This component is surface-mount, packaged in a 16-SOIC with a width of 7.50mm. It is designed for AEC-Q100 certification and is Pb-free and Halogen-free, complying with RoHS standards.