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NBSG16VSMN The ON Semiconductor NBSG16VSMN is a SiGe differential receiver/driver designed for high-frequency applications requiring variable output swing. It supports data rates up to 12 Gb/s.
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NBSG16VSMN

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NBSG16VSMN is a SiGe differential receiver/driver designed for high-frequency applications requiring variable output swing. It supports data rates up to 12 Gb/s.
✓ Total Stock: 6,148 pcs
$ Price Range: $0.75

NBSG16VSMN Available from 1 distributor

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Smaxon Electronics ✓
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6,148 pcs
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6148 pcs On Request 1 On Request On Request 0436+ On Request On Request
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NBSG16VSMN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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NBSG16VSMN Description

Short technical summary and product information.

The NBSG16VSMN from ON Semiconductor is a high-performance SiGe differential receiver/driver with a variable output swing, suitable for demanding high-frequency applications. It offers a maximum input clock frequency of up to 12 GHz and a maximum input data rate of up to 12 Gb/s.

 

This device features internal 50 Ohm termination resistors on its inputs, which accept various logic levels including NECL, PECL, LVTTL, LVCMOS, CML, or LVDS. The output amplitude can be adjusted by applying a voltage to the VCTRL input pin, providing a variable swing ECL output ranging from 100 mV to 750 mV amplitude.

 

The NBSG16VSMN is optimized for operation with VCC - VEE between 3.0 V and 3.465 V. It is available in a 16-VFQFN exposed pad package and is surface-mounted. The device is functionally equivalent to EP16VS devices but offers enhanced bandwidth and lower EMI capabilities, making it a suitable choice for applications driving VCSEL lasers.

NBSG16VSMN Quick Information

Product Type: Differential Receiver/Driver
Series: NBSG16
Canonical Name: NBSG16VSMN SiGe Differential Receiver/Driver with Variable Output Swing
Subcategory: Line Transceivers

NBSG16VSMN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NBSG16VSMN Estimated Pricing

Qty Low High
1+ $0.75 $0.75

Estimated market price range - modelled values for guidance only, not live distributor offers.

NBSG16VSMN Features

  • Maximum input clock frequency up to 12 GHz.
  • Maximum input data rate up to 12 Gb/s.
  • Variable swing PECL/NECL output.
  • Internal 50 Ohm input termination resistors.
  • 16-VFQFN exposed pad package.

NBSG16VSMN Applications

  • High-speed differential receiver/driver applications
  • Variable output swing VCSEL laser driving
  • High-frequency instrumentation and test equipment
  • 12 Gbps serial data communication systems
  • NECL/PECL/CML/LVDS signal interface conversion

NBSG16VSMN FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum input clock frequency for the NBSG16VSMN?

The maximum input clock frequency is typically 12 GHz.

What is the maximum input data rate supported by the NBSG16VSMN?

The maximum input data rate is typically 12 Gb/s.

What is the typical rise and fall time for the NBSG16VSMN?

The typical rise and fall times are 40 ps when VCTRL is set to VCC - 1 V.

What is the typical propagation delay of the NBSG16VSMN?

The typical propagation delay is 120 ps when VCTRL is set to VCC - 1 V.

What is the output swing range for the NBSG16VSMN?

The output swing is variable from 100 mV to 750 mV peak-to-peak for differential outputs when VCC - VEE is between 3.0 V and 3.465 V.

What are the operating voltage ranges for the NBSG16VSMN?

For PECL output, the operating voltage range is 2.375 V to 3.465 V. For NECL output, the range is -3.465 V to -2.375 V.

What type of package is the NBSG16VSMN supplied in?

The NBSG16VSMN is supplied in a 16-VFQFN exposed pad package.

NBSG16VSMN Alternate Parts

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NBSG16MN
On Semiconductor
The NBSG16MN is a SiGe differential receiver/driver from On Semiconductor, designed for high-frequency applications. It features a data rate exceeding 12 Gb/s and a 120 ps propagation delay.
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