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5,245 pcs
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5245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NAND512W3A2CN6E from Micron Technology is a 512Mbit NAND Flash memory IC designed for high-density storage applications. It utilizes a parallel interface and is housed in a 48-TSOP package suitable for surface mounting.
This memory component operates with a supply voltage ranging from 2.7V to 3.6V, offering a typical access time of 50 ns. The memory organization is 64M x 8, and it is classified as non-volatile FLASH - NAND technology. The device supports a page program time of 200 µs and a fast block erase time of 2 ms.
With a data retention capability of 10 years and 100,000 program/erase cycles (with ECC), the NAND512W3A2CN6E is built for reliability. It operates within a temperature range of -40°C to 85°C.
This product is not recommended for new designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NAND512W3A2CN6E operates within a voltage range of 2.7V to 3.6V.
The NAND512W3A2CN6E is supplied in a 48-TSOP package, specifically a 48-TFSOP (0.724", 18.40mm Width).
The operating temperature range for the NAND512W3A2CN6E is -40°C to 85°C (TA).
The memory size of the NAND512W3A2CN6E is 512Mbit.
The NAND512W3A2CN6E is a Non-Volatile FLASH - NAND memory.
The access time for the NAND512W3A2CN6E is 50 ns.
The NAND512W3A2CN6E can withstand 100,000 program/erase cycles (with ECC).