| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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325 pcs
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325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NAND flash memory from STMicroelectronics offers a density of 512Mbit and utilizes a parallel interface. Designed for mass storage applications, it operates with a supply voltage between 2.7V and 3.6V, providing a fast access time of 50ns.
The device supports a page size of 512 + 16 spare Bytes for x8 devices and 256 + 8 spare Words for x16 devices. Block erase time is typically 2ms, and page program time is 200µs. It is rated for 100,000 program/erase cycles and offers 10 years of data retention.
The NAND512W3A0AN6 is packaged in a 48-TSOP (0.724", 18.40mm Width) and is suitable for surface mount applications. It operates within a temperature range of -40°C to 85°C (TA).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 512 Mbit.
The operating voltage is between 2.7V and 3.6V.
The access time is 50 ns.
It is supplied in a 48-TSOP package.
The operating temperature range is -40°C to 85°C (TA).
It can endure 100,000 program/erase cycles.
The data retention period is 10 years.