| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NAND flash memory from Micron Technology offers a 512Mbit capacity organized as 64M x 8 bits. It features a parallel interface and operates within a supply voltage range of 1.7V to 1.95V. The device has an access time of 50 ns and a write cycle time of 50 ns.
Key electrical characteristics include a page size of (512 + 16 spare) bytes and a block size of (16K + 512 spare) bytes. The page program time is typically 200 µs, and the block erase time is typically 2 ms. Data retention is rated for 10 years, with 100,000 program/erase cycles supported with ECC.
The NAND512R3A2CZA6E is housed in a 63-TFBGA package and is designed for surface mounting. It operates within a temperature range of -40°C to 85°C (TA). This component is RoHS3 compliant and has an MSL rating of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
512Mbit.
64M x 8.
1.7V to 1.95V.
50 ns.
-40°C to 85°C.
63-TFBGA (63-VFBGA 9x11).
10 years.