NAND02GW3B2AN6F IC FLASH 2GBIT PARALLEL 48TSOP
Mfr Part #:

NAND02GW3B2AN6F

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
IC FLASH 2GBIT PARALLEL 48TSOP
✓ Total Stock: 4,305 pcs

NAND02GW3B2AN6F Available from 1 distributor

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✓ Non-Authorised
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NAND02GW3B2AN6F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Interface
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Operating Voltage
Supplier Device Package
Tape & Reel
Technology
Voltage
Write Cycle Time

NAND02GW3B2AN6F Description

Short technical summary and product information.

The STMicroelectronics NAND02GW3B2AN6F is a 2Gb parallel NAND flash memory device. It is organized as 256M x 8 bits, providing a substantial storage capacity for various applications. The memory offers a typical access time of 30ns and a write cycle time of 30ns, ensuring efficient data handling.

 

Operating within a voltage range of 2.7V to 3.6V, this NAND flash memory is suitable for integration into systems powered by standard 3.3V logic. It is housed in a 48-TSOP package, designed for surface mounting, which contributes to space savings on PCBs.

 

The device is rated for an industrial operating temperature range of -40°C to 85°C, making it suitable for demanding environments. Its parallel interface facilitates straightforward data transfer for storage and retrieval operations in embedded systems and other electronic devices requiring non-volatile memory.

 

This NAND flash memory is designed for applications requiring reliable data storage, such as in consumer electronics, industrial control systems, and embedded computing platforms. Its specifications make it a versatile choice for designers needing robust non-volatile storage solutions.

NAND02GW3B2AN6F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
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