| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,706 pcs
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1706 pcs | On Request | 1 | On Request | On Request | 2034+ | On Request | On Request | |
|
531 pcs
|
531 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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This 2 Gbit SLC NAND Flash Memory from STMicroelectronics, part number NAND02GR3B2DZA6E, offers a cost-effective solution for mass storage applications. It features a multiplane architecture allowing simultaneous program/erase operations on two independent planes.
The device supports a bus width of x8 or x16 and operates with a supply voltage of 1.8 V or 3 V. Key performance specifications include a page read random access time of 25 µs (max), a page program time of 200 µs (typ), and a block erase time of 1.5 ms (typ).
Data integrity is ensured with 100,000 program/erase cycles (with ECC) and 10 years of data retention. The NAND02GR3B2DZA6E is compliant with the ONFI 1.0 command set. It is available in VFBGA63 and TSOP48 packages, suitable for various mounting requirements.
This memory is designed for applications requiring high density and reliable data storage. Its features make it suitable for embedded systems and consumer electronics where mass storage is essential.
2 Gbit.
2048 bytes for x8 device, 1024 words for x16 device.
128 Kbytes for x8 device, 64 Kwords for x16 device.
1.8 V or 3 V.
100,000 cycles with ECC.
10 years.
VFBGA63 and TSOP48.