NAND02GR3B2DZA6E The STMicroelectronics NAND02GR3B2DZA6E is a 2 Gbit SLC NAND Flash Memory with a multiplane architecture. It supports 1.8V or 3V supply voltages and is ONFI 1.0 compliant.
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NAND02GR3B2DZA6E

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics NAND02GR3B2DZA6E is a 2 Gbit SLC NAND Flash Memory with a multiplane architecture. It supports 1.8V or 3V supply voltages and is ONFI 1.0 compliant.
Total Stock: 2,237 pcs

NAND02GR3B2DZA6E Available from 2 distributors

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NAND02GR3B2DZA6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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NAND02GR3B2DZA6E Description

Short technical summary and product information.

This 2 Gbit SLC NAND Flash Memory from STMicroelectronics, part number NAND02GR3B2DZA6E, offers a cost-effective solution for mass storage applications. It features a multiplane architecture allowing simultaneous program/erase operations on two independent planes.

 

The device supports a bus width of x8 or x16 and operates with a supply voltage of 1.8 V or 3 V. Key performance specifications include a page read random access time of 25 µs (max), a page program time of 200 µs (typ), and a block erase time of 1.5 ms (typ).

 

Data integrity is ensured with 100,000 program/erase cycles (with ECC) and 10 years of data retention. The NAND02GR3B2DZA6E is compliant with the ONFI 1.0 command set. It is available in VFBGA63 and TSOP48 packages, suitable for various mounting requirements.

 

This memory is designed for applications requiring high density and reliable data storage. Its features make it suitable for embedded systems and consumer electronics where mass storage is essential.

NAND02GR3B2DZA6E Quick Information

Product Type: SLC NAND Flash Memory
Series: NAND02G-BxD
Canonical Name: STMicroelectronics NAND02GR3B2DZA6E SLC NAND Flash Memory
Subcategory: SLC NAND

NAND02GR3B2DZA6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NAND02GR3B2DZA6E Features

  • 2 Gbit high density NAND flash memory.
  • Supports 1.8 V or 3 V supply voltage.
  • ONFI 1.0 compliant command set.
  • 100,000 program/erase cycles with ECC.
  • 10 years data retention.

NAND02GR3B2DZA6E Applications

  • Ideal for solid-state storage applications.
  • Used in embedded system code storage.
  • Suitable for consumer electronics memory.
  • Designed for high-density data logging.
  • Applicable in industrial memory modules.

NAND02GR3B2DZA6E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the NAND02GR3B2DZA6E?

2 Gbit.

What is the page size of this NAND Flash?

2048 bytes for x8 device, 1024 words for x16 device.

What is the block size?

128 Kbytes for x8 device, 64 Kwords for x16 device.

What is the operating voltage range?

1.8 V or 3 V.

How many program/erase cycles can it withstand?

100,000 cycles with ECC.

What is the data retention period?

10 years.

What packages are available?

VFBGA63 and TSOP48.

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