| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,168 pcs
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2168 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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The STMicroelectronics NAND02GR3B2CZA6E is a high-density 2 Gbit flash memory integrated circuit designed for various storage applications. It utilizes a parallel interface for data transfer and operates within a supply voltage range of 1.7V to 1.95V, with a nominal voltage of 1.8V.
This flash memory offers a maximum access time of 25ns, ensuring efficient data retrieval. It is organized as 256Mx8 and has a sector size of 128kB with a page size of 2kB. The operating temperature range is from -40°C to 85°C, making it suitable for industrial applications.
The component is housed in a compact TFBGA package measuring 9.50 x 12 mm with a low seated height of 1.05 mm. It features surface mount technology and a terminal pitch of 0.8 mm, facilitating dense board designs. The NAND02GR3B2CZA6E is built using CMOS technology and has a low standby current of 50 nA.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.03 | $10.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NAND02GR3B2CZA6E is a Flash memory.
The memory density is 2 Gbit.
The organization is 256Mx8.
It uses a Parallel interface.
The maximum access time is 25000 ns.
The minimum supply voltage is 1.7 V.
The nominal supply voltage is 1.8 V.