| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,522 pcs
|
2522 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Micron Technology NAND01GW3B2CZA6E is a 1Gbit parallel NAND flash memory integrated circuit. It is designed for applications requiring non-volatile storage with a voltage range of 2.7V to 3.6V. The memory offers a fast 25ns access time and a 25ns write cycle time.
Operating within a temperature range of -40°C to 85°C (TA), this component is suitable for various environmental conditions. It is packaged in a 63-VFBGA (9.5x12) and utilizes surface mount technology for integration into electronic designs.
The NAND01GW3B2CZA6E is classified as FLASH - NAND technology, with a memory organization of 128M x 8. Its RoHS 3 compliance and Moisture Sensitivity Level 1 rating indicate standard industry handling and environmental considerations.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
63-VFBGA.
-40°C to 85°C.
1Gbit.
Parallel.
25 ns.
25 ns.