| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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13,908 pcs
|
13908 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,898 pcs
|
6898 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NAND flash memory from Micron Technology, part number NAND01GW3B2CN6E, offers a storage capacity of 1Gbit. It utilizes a parallel interface for data transfer and is organized as 128M x 8 bits. The device operates with a supply voltage ranging from 2.7V to 3.6V and boasts a fast access time of 25 ns.
The NAND01GW3B2CN6E is housed in a 48-TSOP package, suitable for surface mount applications. It operates within an ambient temperature range of -40°C to 85°C. This component is classified as RoHS3 Compliant and has an MSL rating of 1.
Designed for mass storage applications, this NAND flash memory provides cost-effective solutions. Its features include hardware block locking and program/erase protection during power transitions, contributing to data protection and integrity.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size of the NAND01GW3B2CN6E is 1 Gbit.
The NAND01GW3B2CN6E is a Flash memory.
The memory interface of the NAND01GW3B2CN6E is Parallel.
The memory organization of the NAND01GW3B2CN6E is 128M x 8.
The access time of the NAND01GW3B2CN6E is 25 ns.
The supply voltage range for the NAND01GW3B2CN6E is 2.7V to 3.6V.
The operating temperature range for the NAND01GW3B2CN6E is -40°C to 85°C.