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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This 1Gbit NAND flash memory from Micron Technology, part number NAND01GW3B2BZA6E, offers a parallel interface and is suitable for mass storage applications. It features a page size of (2048 + 64 spare) bytes for x8 devices and (1024 + 32 spare) words for x16 devices. The memory supports a supply voltage range of 2.7V to 3.6V and operates within an ambient temperature range of -40°C to 85°C.
Key performance specifications include a random access time of 25 µs (max) and a sequential access time of 30 ns (min). Page program time is typically 200 µs, and fast block erase is typically 2 ms. The device ensures data integrity with 100,000 program/erase cycles per block (with ECC) and 10 years of data retention.
The NAND01GW3B2BZA6E is available in a 63-VFBGA (9x11) package and is designed for surface mount applications. It utilizes FLASH - NAND technology and has a memory organization of 128M x 8.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 1 Gbit.
It is a FLASH - NAND memory type.
The memory interface is Parallel.
The operating voltage is between 2.7V and 3.6V.
The operating temperature range is -40°C to 85°C (TA).
It is supplied in a 63-TFBGA package.
It can withstand 100,000 program/erase cycles per block with ECC.