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NAND01GW3B2AN6E The STMicroelectronics NAND01GW3B2AN6E is a 1Gb parallel NAND flash memory IC. It features a 128M x 8 organization and operates with a 2.7V to 3.6V supply voltage.
Mfr Part #:

NAND01GW3B2AN6E

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics NAND01GW3B2AN6E is a 1Gb parallel NAND flash memory IC. It features a 128M x 8 organization and operates with a 2.7V to 3.6V supply voltage.
✓ Total Stock: 4,500 pcs
$ Price Range: $1.28

NAND01GW3B2AN6E Available from 1 distributor

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✓ Non-Authorised
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Components Technology Group, Inc. ✓
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4,500 pcs
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4500 pcs On Request 1 On Request On Request On Request On Request On Request
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NAND01GW3B2AN6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Supply Voltage
Technology
Voltage
Write Cycle Time
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NAND01GW3B2AN6E Description

Short technical summary and product information.

The STMicroelectronics NAND01GW3B2AN6E is a high-density NAND flash memory integrated circuit with a capacity of 1 Gbit. It utilizes a parallel interface and a FLASH - NAND technology, offering a memory organization of 128M x 8. This component is designed for mass storage applications and operates within a supply voltage range of 2.7V to 3.6V.

 

Key electrical characteristics include an access time of 30 ns and a write cycle time of 30 ns. The device operates reliably across a temperature range of -40°C to 85°C. It is housed in a 48-TFSOP package, suitable for surface mounting.

 

The NAND01GW3B2AN6E supports a page size of (2048 + 64 spare) bytes and a block size of (128 K + 4 K spare) bytes. It offers features such as hardware block locking for data protection and is rated for 100,000 program/erase cycles per block with ECC, ensuring data integrity over its 10-year data retention period.

NAND01GW3B2AN6E Quick Information

Product Type: NAND Flash Memory
Canonical Name: STMicroelectronics NAND01GW3B2AN6E FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 48-TSOP
Subcategory: NAND Flash

NAND01GW3B2AN6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NAND01GW3B2AN6E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

NAND01GW3B2AN6E Features

  • 1Gb parallel NAND flash memory IC.
  • 128M x 8 memory organization.
  • 30 ns access and write cycle times.
  • Operates at 2.7V to 3.6V supply.
  • Surface mount 48-TFSOP package.

NAND01GW3B2AN6E Applications

  • Suitable for mass storage applications.
  • Designed for embedded systems.
  • Requires robust data integrity.
  • Ideal for temperature-sensitive environments.

NAND01GW3B2AN6E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the NAND01GW3B2AN6E?

The memory size is 1 Gbit.

What is the memory organization?

The memory organization is 128M x 8.

What is the operating voltage range?

The operating voltage is 2.7V to 3.6V.

What is the operating temperature range?

The operating temperature range is -40°C to 85°C (TA).

What type of package does the NAND01GW3B2AN6E use?

It uses a 48-TFSOP package with a width of 0.724 inches (18.40mm).

What is the access time for this NAND flash memory?

The access time is 30 ns.

How many program/erase cycles can this memory withstand?

It can withstand 100,000 program/erase cycles per block with ECC.

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