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NAND01GR3B2CZA6E The Micron Technology NAND01GR3B2CZA6E is a 1 Gbit NAND flash memory with a parallel interface. It operates from 1.7V to 1.95V and is housed in a 63-VFBGA package.
Mfr Part #:

NAND01GR3B2CZA6E

Available from 3 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology NAND01GR3B2CZA6E is a 1 Gbit NAND flash memory with a parallel interface. It operates from 1.7V to 1.95V and is housed in a 63-VFBGA package.
✓ Total Stock: 30,887 pcs
$ Price Range: $1.28

NAND01GR3B2CZA6E Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
19,570 pcs
On Request
19570 pcs On Request 1 On Request On Request 1224+ On Request On Request
Romaks Technologies ✓
Non-Authorised Inventory information
9,040 pcs
On Request
9040 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,277 pcs
On Request
2277 pcs On Request 1 On Request On Request 12+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NAND01GR3B2CZA6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Technology
Voltage
Write Cycle Time
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NAND01GR3B2CZA6E Description

Short technical summary and product information.

This NAND flash memory from Micron Technology, part number NAND01GR3B2CZA6E, offers a storage capacity of 1 Gbit with a 128M x 8 organization. It features a parallel interface and operates within a supply voltage range of 1.7V to 1.95V. The device is designed for a wide operating temperature range of -40°C to 85°C (TA).

 

Key electrical specifications include an access time of 25 ns and a write cycle time of 25 ns. The page program time is typically 200 µs, and fast block erase is typically 2 ms. Data retention is rated for 10 years, with 100,000 program/erase cycles per block when using ECC.

 

The NAND01GR3B2CZA6E is supplied in a 63-TFBGA package, with the supplier device package specified as 63-VFBGA (9.5x12). It utilizes a surface mount type for integration into electronic circuits.

NAND01GR3B2CZA6E Quick Information

Product Type: NAND Flash Memory
Canonical Name: Micron Technology NAND01GR3B2CZA6E NAND Flash Memory
Subcategory: NAND Flash

NAND01GR3B2CZA6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NAND01GR3B2CZA6E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

NAND01GR3B2CZA6E Features

  • 1 Gbit NAND flash memory capacity.
  • Parallel interface for data transfer.
  • Wide operating voltage from 1.7V to 1.95V.
  • Extended temperature range of -40°C to 85°C.
  • Compact 63-VFBGA surface mount package.

NAND01GR3B2CZA6E Applications

  • Suitable for mass storage applications.
  • Ideal for embedded systems.
  • Used in portable electronic devices.
  • Applications requiring non-volatile storage.

NAND01GR3B2CZA6E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the NAND01GR3B2CZA6E?

The memory size is 1 Gbit.

What is the memory organization of this device?

The memory organization is 128M x 8.

What is the operating voltage range?

The operating voltage range is 1.7V to 1.95V.

What is the operating temperature range?

The operating temperature range is -40°C to 85°C.

What package does the NAND01GR3B2CZA6E come in?

It comes in a 63-TFBGA package, specifically a 63-VFBGA (9.5x12) surface-mount package.

What is the access time of this NAND Flash memory?

The access time is 25 ns.

How many program/erase cycles does this memory support?

It supports 100,000 program/erase cycles per block with ECC.

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