| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The N82S123N is a bipolar TTL-based programmable read-only memory (PROM) designed for digital logic applications. Manufactured by SIG, this memory device provides a storage capacity of 256 bits organized in a 32 x 8 configuration. It is engineered to operate reliably on a standard 5V power rail, accepting supply voltages between 4.75V and 5.25V. The component draws a maximum supply current of 96mA during operation. Designed for commercial or light industrial environments, it maintains stable performance across an operating temperature range from 0°C to 70°C. The IC is housed in a dual in-line package (DIP), facilitating through-hole mounting on printed circuit boards. This part serves as a non-volatile storage solution for fixed data, firmware, or lookup tables in legacy TTL systems and microcontroller-based designs requiring simple addressable memory expansion.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N82S123N operates within a supply voltage range of 4.75V to 5.25V.
The maximum supply current for this component is 96mA.
The device uses a 256-bit memory size organized in a 32 x 8 configuration.
The component functions reliably between 0°C and 70°C.
The N82S123N is available in a DIP (dual in-line) package.