| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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205,455 pcs
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205455 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The STMicroelectronics N1HNK60 is an N-Channel MOSFET belonging to the SuperMESH™ series, achieved through extreme optimization of ST’s strip-based PowerMESH™ layout. This component is designed for various power applications requiring efficient switching.
Key electrical specifications include a breakdown voltage of 600V, a continuous drain current rating of 400mA, and a threshold voltage of 3V. The on-resistance (RDS(on)) is a maximum of 8.5Ω. Input capacitance is rated at 156pF, with a rise time of 5ns and a fall time of 25ns.
Thermal characteristics are also important, with a maximum power dissipation of 3.3W. The operating temperature range spans from -55°C to 150°C. The MOSFET is housed in a SOT-223 surface-mount package, making it suitable for compact designs.
This device is RoHS3 compliant, has an MSL of 1, and is REACH unaffected, indicating adherence to environmental standards for electronic components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
SOT-223 surface mount.
-55°C to 150°C.
400mA.
8.5Ω.
3V.
3.3W.