| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,500 pcs
|
8500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) |
The Renesas N0603N-S23-AY is an N-Channel MOSFET designed for power applications. It offers a maximum drain-source voltage (Vdss) of 60V and can handle a continuous drain current of 100A (Ta).
Key electrical characteristics include a maximum on-resistance (Rds On) of 4.6mOhm at 50A and 10V, and a gate charge (Qg) of 133 nC at 10V. The input capacitance (Ciss) is rated at 7730 pF at 25V. The gate-source voltage (Vgs) maximum is ±20V, with a drive voltage of 10V.
This MOSFET operates at temperatures up to 150°C (TJ). It has a power dissipation of 1.5W (Ta) and 156W (Tc). The component is designed for through-hole mounting and comes in a TO-262-3 Long Leads, I²Pak, TO-262AA package, also referred to as TO-262.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current is 100A (Ta).
The maximum on-resistance (Rds On) is 4.6mOhm at 50A and 10V.
The component is supplied in a TO-262-3 Long Leads, I²Pak, TO-262AA package, suitable for through-hole mounting.
The operating temperature is up to 150°C (TJ).