| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | 98 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Frequency | |
| Mounting Type | |
| Output Power | |
| Storage Temperature |
The Philips MX0912B251Y is an NPN silicon planar epitaxial microwave power transistor housed in a SOT439A metal ceramic flange package. It is intended for use in common base class C broadband pulse power amplifiers operating from 960 to 1215 MHz, specifically for TACAN applications.
Key electrical specifications include a collector-base voltage of 65V, a collector-emitter voltage of 60V, and a maximum collector current of 15A. The transistor delivers a minimum output power of 235W with a minimum power gain of 7dB and a minimum collector efficiency of 42% at 50V collector voltage.
This device features an interdigitated structure with high emitter efficiency and diffused emitter ballasting resistors for excellent current sharing and high VSWR withstanding. Gold metallization ensures stable characteristics and extended lifetime, while the multicell geometry balances dissipated power and thermal resistance. The input and output matching cell simplifies circuit design.
Thermal characteristics include a maximum total power dissipation of 690W at 75°C mounting base temperature and an operating junction temperature up to 200°C. The soldering temperature is rated at 235°C for 10 seconds.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 15A under pulsed conditions (tp ≤ 10 μs; δ ≤ 10%).
The collector-base voltage rating (open emitter) is 65V.
The maximum collector-emitter voltage is 60V with the emitter-base resistance at 0 Ohms, and 20V with the base open.
The maximum total power dissipation (peak power) is 690W at a mounting base temperature of 75°C, with pulse conditions of tp ≤ 10 μs and δ ≤ 10%.
The operating junction temperature can be up to 200°C.
The transistor provides a minimum output power of 235W under Class C operation with specific pulse conditions.
This transistor is intended for use in the frequency range of 960 to 1215 MHz.