| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MW7IC2725NR1 from NXP Semiconductors is a wideband integrated RF power amplifier designed for cellular base station applications, particularly WiMAX. It utilizes LDMOS technology and features on-chip matching for usability from 2300-2700 MHz.
This multi-stage amplifier is rated for 26 to 32 Volt operation and supports various cellular base station modulation formats. Key electrical specifications include a typical power gain of 28.5 dB, an average output power of 4 Watts, and a typical output power at 1 dB compression of 25 Watts CW. It also offers a typical power added efficiency of 17% under WiMAX conditions.
The device is characterized with series equivalent large-signal impedance parameters and common source S-parameters. It includes integrated quiescent current temperature compensation with an enable/disable function and ESD protection. The amplifier is housed in a 225°C capable plastic package, specifically the TO-270 WB-16 or similar variants, suitable for chassis mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.98 | $0.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MW7IC2725NR1 operates at 32V.
The MW7IC2725NR1 is supplied in a TO-270-16 Variant, Flat Leads package.
The MW7IC2725NR1 is capable of operating at temperatures up to 225°C.
The MW7IC2725NR1 is RoHS3 Compliant.
The typical power gain of the MW7IC2725NR1 is 28.5 dB.
The average output power of the MW7IC2725NR1 is 4 W.
The MW7IC2725NR1 is designed for use from 2300-2700 MHz.