| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MW7IC2220GNR1 from NXP Semiconductors is a wideband integrated circuit designed as an RF LDMOS power amplifier. It operates within the 2.11 GHz to 2.17 GHz frequency range, making it suitable for W-CDMA applications.
This multi-stage amplifier is rated for 28 Vdc operation and features on-chip matching for a 50 Ohm input. Key electrical characteristics include a typical power gain of 31 dB and a typical output power at 1 dB compression point of 20 Watts CW. It is also characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters.
The device is housed in a TO-270-16 Variant, Gull Wing package, designed for surface mount applications. It has an operating junction temperature capability of 225°C and a case operating temperature of 150°C. The amplifier is RoHS3 compliant and has an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.98 | $0.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MW7IC2220GNR1 operates from 2.11 GHz to 2.17 GHz.
The typical power gain is 31 dB.
The typical output power at 1 dB compression is 20 Watts CW.
The operating voltage is 28 Vdc.
It is in a TO-270-16 Variant, Gull Wing package.
It is a surface mount device.