| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,637 pcs
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1637 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MW6S010NR1 is a lateral N-channel enhancement-mode LDMOS RF Power MOSFET manufactured by NXP Semiconductors. It is designed for Class A or Class AB base station applications operating at frequencies up to 1500 MHz, making it suitable for analog and digital modulation and multicarrier amplifier applications.
Key electrical characteristics include a typical power output of 10 Watts PEP at 960 MHz with 28 VDD and 125 mA quiescent current. It provides a typical power gain of 18 dB and a drain efficiency of 32%. The device is capable of handling a 10:1 VSWR at 28 Vdc, 960 MHz, and 10 Watts CW output power. It features on-chip RF feedback for broadband stability and integrated ESD protection.
The MOSFET is housed in a TO-270-2 plastic package, suitable for surface mounting. It is qualified for operation up to 32 VDD. The operating junction temperature is rated up to 225°C, with a case operating temperature of 150°C. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 68 Vdc.
The typical operating frequency is 960 MHz.
The typical power output is 10 Watts PEP.
The package type is TO-270-2.
Yes, it is RoHS3 compliant.
The Moisture Sensitivity Level is 1.