MW6S010GNR1 The NXP Semiconductors MW6S010GNR1 is an N-Channel Enhancement-Mode Lateral RF Power MOSFET designed for base station applications. It offers 10W output power and operates up to 1500 MHz.
Mfr Part #:

MW6S010GNR1

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors MW6S010GNR1 is an N-Channel Enhancement-Mode Lateral RF Power MOSFET designed for base station applications. It offers 10W output power and operates up to 1500 MHz.
✓ Total Stock: 2,490 pcs
$ Price Range: $0.99

MW6S010GNR1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,340 pcs
2340 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
150 pcs
150 pcs On Request 1 On Request On Request On Request On Request On Request

MW6S010GNR1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
Mounting Type
Power
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
VSWR
Voltage

MW6S010GNR1 Description

Short technical summary and product information.

The MW6S010GNR1 from NXP Semiconductors is a high-performance RF Power Field Effect Transistor designed for Class A or Class AB base station applications. This N-Channel Enhancement-Mode Lateral MOSFET operates at frequencies up to 1500 MHz and is suitable for analog and digital modulation, as well as multicarrier amplifier applications.

 

Key electrical specifications include a typical power gain of 18 dB and a drain efficiency of 32% at 960 MHz. It is designed for 28 VDC operation, with a maximum rated drain-source voltage of 68 Vdc and gate-source voltage of 12 Vdc. The device is capable of handling a 10:1 VSWR at 28 Vdc, 960 MHz, and 10 Watts CW output power.

 

This MOSFET features on-chip RF feedback for broadband stability and integrated ESD protection. It is qualified up to a maximum of 32 VDD operation. The device is housed in a TO-270-2 GULL plastic package, suitable for surface mounting. It is supplied in tape and reel packaging, with 500 units per reel.

 

The operating junction temperature is rated up to 225°C, and the case operating temperature is 150°C. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

MW6S010GNR1 Quick Information

Product Type: RF MOSFET
Canonical Name: MW6S010GNR1 N-Channel Enhancement-Mode Lateral MOSFET
Subcategory: RF Power MOSFET

MW6S010GNR1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MW6S010GNR1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MW6S010GNR1 Features

  • N-Channel Enhancement-Mode Lateral MOSFET.
  • Designed for base station applications.
  • 10 Watts PEP output power.
  • 18 dB typical power gain.
  • Surface Mount TO-270-2 GULL package.

MW6S010GNR1 Applications

  • Used in RF power amplification circuits
  • Suitable for high-frequency RF switching
  • Ideal for RF transmitters and receivers
  • Applicable in communication infrastructure

MW6S010GNR1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the typical power gain of the MW6S010GNR1?

The typical power gain is 18 dB at 960 MHz.

What is the maximum operating frequency for this RF MOSFET?

This RF MOSFET is designed for applications with frequencies up to 1500 MHz.

What is the typical output power at 960 MHz?

The typical output power is 10 Watts CW.

What is the RoHS status of the MW6S010GNR1?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1.

What type of package is the MW6S010GNR1 in?

It is in a TO-270-2 GULL plastic package.

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