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MW6S004NT1 The NXP Semiconductors MW6S004NT1 is an RF Power Field Effect Transistor. It operates with a Drain-Source Voltage of 68V and a frequency of 1.96GHz.
Mfr Part #:

MW6S004NT1

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors MW6S004NT1 is an RF Power Field Effect Transistor. It operates with a Drain-Source Voltage of 68V and a frequency of 1.96GHz.
✓ Total Stock: 6,376 pcs

MW6S004NT1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
6,216 pcs
On Request
6216 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
160 pcs
On Request
160 pcs On Request 1 On Request On Request On Request On Request On Request
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MW6S004NT1 Specifications Quick View

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MW6S004NT1 Description

Short technical summary and product information.

The MW6S004NT1 from NXP Semiconductors is an RF Power Field Effect Transistor designed for high-frequency applications. This transistor features a Drain-Source Voltage rating of 68V and a DC Voltage Rating of 28V. It operates at a frequency of 1.96GHz, with a maximum frequency of 2GHz.

 

The device has a current rating of 50mA and is suitable for surface mount applications. Its operating temperature range spans from -65°C to a maximum of 150°C, making it robust for various environmental conditions. The MW6S004NT1 is part of the RF Power Field Effect Transistor category, offering reliable performance in RF power amplification circuits.

 

This component is manufactured by NXP Semiconductors, a recognized leader in semiconductor solutions. Its specifications make it a suitable choice for designs requiring efficient RF power handling. The surface mount package simplifies integration into printed circuit boards.

MW6S004NT1 Quick Information

Product Type: RF Power Field Effect Transistor
Canonical Name: MW6S004NT1 RF Power Field Effect Transistor
Subcategory: RF Power Field Effect Transistor

MW6S004NT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MW6S004NT1 Features

  • 68V drain-source voltage rating.
  • 50mA current rating for RF applications.
  • Operates at frequencies up to 2GHz.
  • Surface mount package for automated assembly.
  • Wide operating temperature range from -65°C to 150°C.

MW6S004NT1 Applications

  • 用于RF功率放大电路。
  • 应用于无线通信基站。
  • 适合射频信号放大。
  • 用于移动通信设备。
  • 应用于广播电视发射机。

MW6S004NT1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage for the MW6S004NT1?

The Drain-Source Voltage is 68V.

What is the operating frequency of the MW6S004NT1?

The operating frequency is 1.96GHz.

What is the maximum operating temperature for this transistor?

The maximum operating temperature is 150°C.

What is the minimum operating temperature for the MW6S004NT1?

The minimum operating temperature is -65°C.

How is the MW6S004NT1 mounted?

It is a surface mount device.

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