MW5IC970NBR1

The MW5IC970NBR1 from NXP Semiconductors is a high-performance RF LDMOS wideband 2-stage power amplifier. It is designed for broadband commercial and industrial applications, covering frequencies from 132 MHz to 960 MHz, with typical performance at 800 MHz.

This device is ideal for large-signal, common-source amplifier applications in 28-volt base station equipment. It features a 2-stage design with off-chip matching for input, interstage, and output networks. Key electrical specifications include a typical output power of 70 Watts PEP, a power gain of 30 dB, and a drain efficiency of 48% at 800 MHz and 28 Vdc.

The amplifier is capable of handling a 10:1 VSWR at 28 Vdc, 850 MHz, and 70 Watts CW output power. It includes integrated quiescent current temperature compensation with an enable/disable function and on-chip current mirror gm reference FET for self-biasing applications. The device also features integrated ESD protection.

Packaged in a 200°C capable plastic package (TO-272 WB-16) with flat leads, the MW5IC970NBR1 is suitable for chassis mounting. It is supplied in tape and reel packaging, with 500 units per 13-inch reel. The RoHS3 compliant status indicates adherence to environmental regulations.