| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Medical Grade | |
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The MURF1660CTG is a state-of-the-art ultrafast recovery diode array from ON Semiconductor, designed for use in switching power supplies, inverters, and as free wheeling diodes. It features 60 nanosecond reverse recovery times, a 150°C maximum operating junction temperature, and a high temperature glass passivated junction for reliability. The device offers a peak repetitive reverse voltage of 600V, an average rectified forward current of 8A per diode (16A total device), and a non-repetitive peak surge current of 100A.
Forward voltage is rated at 1.20V maximum at 8A and 150°C, with low leakage current specified at both 25°C and 150°C. The electrically isolated TO-220-3 Full Pack (TO-220FP) package eliminates the need for isolation hardware, simplifying installation. The epoxy molding meets UL 94 V-0 flammability standards, and the package is Pb-free. Thermal resistance junction-to-case is 3.0°C/W per leg, aiding heat dissipation.
This component is suitable for high-frequency rectification and power conversion applications where fast switching and low losses are critical.
The peak repetitive reverse voltage is 600V.
8A per diode and 16A total device at TC=150°C.
Maximum 1.20V at 8A and 150°C, and 1.50V at 8A and 25°C.
60ns maximum at IF=1A, di/dt=50A/µs, and 50ns maximum under other test conditions.
TO-220-3 Full Pack (TO-220FP), through-hole mounting.
-65°C to +150°C.
100A non-repetitive peak surge current at 60Hz.