| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MUR4100E is an ultrafast power rectifier diode from On Semiconductor's SWITCHMODE 'E' Series. Designed for high-frequency switching power supplies and inverters, this device offers a peak repetitive reverse voltage of 1000V and an average rectified forward current of 4A.
It features an ultrafast reverse recovery time of 75 ns, minimizing switching losses. The device guarantees 20 mJ of avalanche energy, providing excellent protection against voltage transients in inductive load circuits. Forward voltage is rated at 1.85V maximum at 4A and 25°C.
The MUR4100E is housed in a through-hole DO-201AA (DO-27) axial lead package. It features a high-temperature glass passivated junction and an operating junction temperature range of -65°C to 175°C. The device is Pb-Free.
| Qty | Low | High |
|---|---|---|
| 1,200+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage (VRRM) is 1000V.
The average rectified forward current (IF(AV)) is 4A.
The maximum forward voltage (VF) is 1.85V at a forward current of 4A and 25°C.
The reverse recovery time (trr) is 75 ns.
It is available in a DO-201AA, DO-27, Axial through-hole package.
The non-repetitive peak surge current (IFSM) is 70A.
Yes, it guarantees a minimum avalanche energy (EAS) of 20 mJ.