| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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190 pcs
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190 pcs | On Request | 1 | On Request | On Request | 95 | On Request | On Request |
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The MUR3015PT from Harris Semiconductor is an ultrafast dual diode characterized by its soft recovery characteristic, with a reverse recovery time (tRR) of less than 30ns. This device is built with planar, silicon nitride passivated, ion-implanted, epitaxial construction, offering a low forward voltage drop.
Key electrical specifications include a peak repetitive reverse voltage of 150V, a working peak reverse voltage of 150V, and a DC blocking voltage of 150V. The average rectified forward current is rated at 15A (total device) at a junction temperature of 150°C, with a peak forward repetitive current of 30A and a nonrepetitive peak surge current of 200A. The operating and storage temperature range is from -55°C to +175°C, with a rated junction temperature of +175°C.
This diode is intended for use in applications such as switching power supplies, power switching circuits, and general-purpose rectification. Its ultrafast and soft recovery minimizes ringing and electrical noise, thereby reducing power loss in switching transistors.
The MUR3015PT is supplied in a JEDEC TO-218AC package, suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage of the MUR3015PT is 150V.
The maximum average rectified forward current is 15A.
The reverse recovery time is less than 30ns.
The MUR3015PT is packaged in a TO-218AC case.
It operates from -55°C to +175°C.