| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MUR20020CT is a high-current Schottky rectifier diode module from GeneSiC Semiconductor, designed for demanding power conversion applications. It features a 1 Pair Common Cathode configuration with a repetitive peak reverse voltage rating of 200 V and an average forward current of 200 A. The device offers a peak forward surge current capability of 2000 A and a maximum forward voltage of 1.0 V at 100 A.
This module is built with Schottky technology for fast switching, with a reverse recovery time of 75 ns. It is designed for chassis mount installation and comes in a Twin Tower package, providing robust thermal performance with a junction-to-case thermal resistance of 0.45 °C/W per leg. The operating junction temperature range is -55°C to 150°C.
Typical applications include high-frequency power supplies, DC-DC converters, and freewheeling diodes in motor drives. The high surge capability and fast recovery make it suitable for circuits requiring efficient rectification and low power loss.
The repetitive peak reverse voltage (VRRM) is 200 V.
The average forward current (IF(AV)) is 200 A.
The maximum forward voltage is 1.0 V at a forward current of 100 A and a junction temperature of 25 °C.
The reverse recovery time (trr) is 75 ns.
It comes in a Twin Tower package for chassis mount installation.
The operating junction temperature range is -55°C to 150°C.
The thermal resistance from junction to case (RΘJC) is 0.45 °C/W per leg.