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MUN5338DW1T3G The ON Semiconductor MUN5338DW1T3G is a dual NPN/PNP pre-biased transistor array in a SOT-363 package. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MUN5338DW1T3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MUN5338DW1T3G is a dual NPN/PNP pre-biased transistor array in a SOT-363 package. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 29,850 pcs
$ Price Range: $0.99

MUN5338DW1T3G Available from 1 distributor

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✓ Non-Authorised
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29,850 pcs
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MUN5338DW1T3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5338DW1T3G Description

Short technical summary and product information.

The ON Semiconductor MUN5338DW1T3G is a digital transistor designed to replace a single device and its external bias resistor network. This Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor, into one component. This integration simplifies circuit design, reduces board space, and lowers component count.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. The device also features an input forward voltage of 20 Vdc and an input reverse voltage of 7 Vdc. The datasheet specifies two possible resistor configurations: R1 = 4.7 kΩ, R2 = 10 kΩ, or R1 = 47 kΩ, R2 = 47 kΩ.

 

This transistor array is housed in a compact SOT-363 (SC-88/SC70-6) surface mount package. It is suitable for applications requiring reduced system cost and board footprint. The device is Pb-free, Halogen Free/BFR Free, and RoHS compliant.

 

Thermal characteristics include a total device dissipation of 250 mW (one junction heated) or 385 mW (both junctions heated) at 25°C ambient. The operating temperature range is -55°C to +150°C.

MUN5338DW1T3G Quick Information

Product Type: Transistor Array
Canonical Name: Dual NPN/PNP Pre-Biased Transistor Array
Subcategory: BJT Arrays

MUN5338DW1T3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MUN5338DW1T3G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5338DW1T3G Features

  • Dual NPN/PNP pre-biased transistor array.
  • Simplifies circuit design and reduces board space.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-363 surface mount package.

MUN5338DW1T3G Applications

  • Ideal for digital logic circuits.
  • Reduces component count in designs.
  • Suitable for space-constrained applications.
  • Used in general purpose switching.

MUN5338DW1T3G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MUN5338DW1T3G?

The collector-emitter voltage (VCEO) for the MUN5338DW1T3G is 50 Vdc.

What is the continuous collector current of the MUN5338DW1T3G?

The continuous collector current (IC) for the MUN5338DW1T3G is 100 mAdc.

What package type is the MUN5338DW1T3G available in?

The MUN5338DW1T3G is available in a SOT-363 package.

What are the internal resistor values for the MUN5338DW1T3G?

The internal resistors can be configured as R1 = 4.7 kΩ, R2 = 10 kΩ, or R1 = 47 kΩ, R2 = 47 kΩ.

What is the operating temperature range for this transistor array?

The junction and storage temperature range for the MUN5338DW1T3G is -55°C to +150°C.

Is the MUN5338DW1T3G RoHS compliant?

Yes, the MUN5338DW1T3G is RoHS3 compliant.

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