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36,000 pcs
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36000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MUN5335DW1T2G is a complementary bipolar transistor array from ON Semiconductor, featuring integrated monolithic bias resistors. This design simplifies circuit construction by replacing discrete transistors and external resistors, thereby reducing board space and component count.
This device includes one NPN and one PNP transistor, both pre-biased for digital applications. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The integrated resistors have a nominal value of 47kΩ. The transistor type is specified as 1 NPN, 1 PNP - Pre-Biased (Dual), with a minimum DC current gain (hFE) of 80 at 5mA, 10V.
Packaged in a compact SOT-363 (SC-88/SC70-6) surface-mount package, the MUN5335DW1T2G is suitable for space-constrained applications. It has a power dissipation rating of 250mW. The device is Pb-Free and Halogen Free, aligning with modern environmental standards.
This series of digital transistors is designed to replace single devices and their external resistor bias networks. The use of a Bias Resistor Transistor (BRT) can reduce both system cost and board space, making it an efficient choice for various digital logic and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN5335DW1T2G is 50 Vdc.
The continuous collector current (IC) for this transistor array is 100 mAdc.
The MUN5335DW1T2G is supplied in a SOT-363 package, also known as SC-88/SC70-6.
The minimum DC current gain (hFE) is 80 at a collector current of 5mA and collector-emitter voltage of 10V.
The maximum power dissipation for the MUN5335DW1T2G is 250mW.
Yes, the device is RoHS3 Compliant.