MUN5334DW1T1G The On Semiconductor MUN5334DW1T1G is a pre-biased bipolar transistor featuring NPN and PNP complements. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MUN5334DW1T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MUN5334DW1T1G is a pre-biased bipolar transistor featuring NPN and PNP complements. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 50,980 pcs
$ Price Range: $0.99

MUN5334DW1T1G Available from 1 distributor

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MUN5334DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Power Dissipation
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MUN5334DW1T1G Description

Short technical summary and product information.

The MUN5334DW1T1G from On Semiconductor is a digital transistor designed to simplify circuit design by integrating a monolithic bias resistor network. This device contains one NPN and one PNP transistor, each with integrated resistors, eliminating the need for external components. It features a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA.

 

The integrated bias resistor network includes a series base resistor (R1) of 22kΩ and a base-emitter resistor (R2) of 47kΩ. The minimum DC current gain (hFE) is 80 at 5mA and 10V, with a Vce saturation of 250mV maximum at 1mA and 10mA.

 

This transistor is housed in a compact SOT-363 surface mount package, making it suitable for space-constrained applications. It is designed to replace single transistors and their external bias resistors, reducing component count and board space. The device is Pb-Free and Halogen Free, complying with RoHS standards.

 

Key electrical parameters include a maximum input forward voltage of 40Vdc and a maximum input reverse voltage of 7Vdc. The maximum power dissipation is rated at 385mW at 25°C ambient temperature.

MUN5334DW1T1G Quick Information

Product Type: Pre-Biased Transistor
Series: MUN5334DW1
Canonical Name: NPN and PNP Transistor with Monolithic Bias Resistor Network
Subcategory: Pre-Biased / Digital Bipolar Transistor

MUN5334DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5334DW1T1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5334DW1T1G Features

  • NPN and PNP complementary transistors integrated.
  • Monolithic bias resistor network included.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-363 surface mount package.

MUN5334DW1T1G Applications

  • Simplifies digital circuit designs.
  • Reduces component count on PCBs.
  • Ideal for space-constrained applications.
  • Replaces discrete transistor and resistor networks.

MUN5334DW1T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MUN5334DW1T1G?

The collector-emitter voltage (VCEO) for the MUN5334DW1T1G is 50 Vdc.

What is the continuous collector current of the MUN5334DW1T1G?

The continuous collector current (IC) for the MUN5334DW1T1G is 100 mAdc.

What are the integrated resistor values in the MUN5334DW1T1G?

The MUN5334DW1T1G has an integrated base input resistor (R1) of 22kΩ and a base-emitter resistor (R2) of 47kΩ.

What is the minimum DC current gain (hFE) for this transistor?

The minimum DC current gain (hFE) for the MUN5334DW1T1G is 80 at 5mA collector current and 10V collector-emitter voltage.

What package type is the MUN5334DW1T1G supplied in?

The MUN5334DW1T1G is supplied in a SOT-363 surface mount package.

What is the maximum power dissipation for the MUN5334DW1T1G?

The maximum power dissipation for the MUN5334DW1T1G is 385mW at 25°C ambient temperature.

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