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MUN5316DW1T1G The ON Semiconductor MUN5316DW1T1G is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. It offers a 50V collector-emitter voltage and 100mA collector current.
Mfr Part #:

MUN5316DW1T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MUN5316DW1T1G is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. It offers a 50V collector-emitter voltage and 100mA collector current.
✓ Total Stock: 37,020 pcs
$ Price Range: $0.99

MUN5316DW1T1G Available from 2 distributors

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✓ Non-Authorised
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Flip Electronics ✓
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24,000 pcs
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24000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
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13,020 pcs
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13020 pcs On Request 1 On Request On Request On Request On Request On Request
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MUN5316DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5316DW1T1G Description

Short technical summary and product information.

The ON Semiconductor MUN5316DW1T1G is a pre-biased bipolar transistor (BJT) array designed to simplify circuit design by integrating transistors with their bias resistors. This device contains one NPN and one PNP transistor, each with a monolithic bias network. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA.

 

The MUN5316DW1T1G features a power dissipation of 250mW and a Vce saturation of 250mV at 1mA/10mA. The DC current gain (hFE) is a minimum of 160 at 5mA/10V. It includes a base resistor (R1) of 4.7kΩ. The transistor type is specified as 1 NPN, 1 PNP - Pre-Biased (Dual).

 

This component is supplied in an SC-88/SC70-6/SOT-363 surface mount package, also referred to as 6-TSSOP, SC-88, SOT-363. The integration of bias resistors within the transistor package reduces board space and component count, making it suitable for applications where miniaturization and cost-effectiveness are important.

 

Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH Unaffected status. These features make the MUN5316DW1T1G a versatile choice for various electronic designs.

MUN5316DW1T1G Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: ON Semiconductor MUN5316DW1T1G Dual NPN/PNP Pre-Biased Transistor
Subcategory: Pre-Biased Transistor Arrays

MUN5316DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5316DW1T1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5316DW1T1G Features

  • Dual NPN and PNP transistor array.
  • 50V collector-emitter breakdown voltage.
  • 100mA maximum continuous collector current.
  • 250mW maximum power dissipation.
  • Integrated 4.7kΩ base resistor.

MUN5316DW1T1G Applications

  • Suitable for pre-biased transistor arrays in circuits.
  • Ideal for compact switching and amplification applications.
  • Used in automotive and industrial electronic modules.
  • Applicable in low-voltage, high-current switching designs.

MUN5316DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MUN5316DW1T1G?

The maximum collector-emitter voltage is 50V.

What is the maximum continuous collector current for this transistor array?

The maximum continuous collector current is 100mA.

What is the power dissipation rating of the MUN5316DW1T1G?

The power dissipation rating is 250mW.

What is the Vce saturation voltage at 1mA collector current and 10mA base current?

The Vce saturation is a maximum of 250mV at 1mA collector current and 10mA base current.

What is the minimum DC current gain (hFE) for the MUN5316DW1T1G?

The minimum DC current gain (hFE) is 160 at 5mA collector current and 10V collector-emitter voltage.

What type of transistors are included in the MUN5316DW1T1G array?

The array contains one NPN and one PNP transistor, pre-biased.

What is the package type for the MUN5316DW1T1G?

The package type is SC-88/SC70-6/SOT-363, suitable for surface mounting.

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