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MUN5315DW1T1G The ON Semiconductor MUN5315DW1T1G is a dual pre-biased bipolar transistor array. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MUN5315DW1T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MUN5315DW1T1G is a dual pre-biased bipolar transistor array. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 12,000 pcs
$ Price Range: $0.99

MUN5315DW1T1G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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12,000 pcs
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MUN5315DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5315DW1T1G Description

Short technical summary and product information.

The ON Semiconductor MUN5315DW1T1G is a digital transistor designed to replace a single device and its external resistor bias network. This Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network, reducing system cost and board space.

 

Key electrical specifications include a 50V collector-emitter voltage and a 100mA continuous collector current. It also features a nominal base resistor (R1) of 10kΩ and a minimum DC current gain (hFE) of 160 @ 5mA, 10V. The maximum power dissipation is 250mW.

 

This device is housed in a surface-mount SC-88/SC70-6/SOT-363 package, making it suitable for compact designs. It is Pb-free, Halogen Free/BFR Free, and RoHS compliant.

 

The MUN5315DW1T1G simplifies circuit design, reduces component count, and saves board space, making it an efficient choice for various applications.

MUN5315DW1T1G Quick Information

Product Type: Bipolar Transistor Array
Canonical Name: Dual Pre-biased Bipolar Transistor Array
Subcategory: Pre-Biased Bipolar Transistor (BJT)

MUN5315DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MUN5315DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5315DW1T1G Features

  • Dual NPN and PNP pre-biased transistor array.
  • 50V collector-emitter breakdown voltage.
  • 100mA continuous collector current.
  • Integrated 10kΩ base resistor.
  • 250mW maximum power dissipation.

MUN5315DW1T1G Applications

  • Simplifies circuit design and reduces component count.
  • Ideal for space-constrained applications.
  • Reduces system cost and board space.
  • Suitable for digital logic applications.

MUN5315DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MUN5315DW1T1G?

The collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the maximum power dissipation?

The maximum power dissipation is 250mW.

What is the package type for this transistor array?

This transistor array is available in a 6-TSSOP, SC-88, SOT-363 package.

Is the MUN5315DW1T1G RoHS compliant?

The status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

What is the REACH status?

The REACH status is REACH Unaffected.

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