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MUN5314DW1T1G The MUN5314DW1T1G from ON Semiconductor is a complementary bias resistor transistor (BRT) featuring one NPN and one PNP transistor in a single package. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MUN5314DW1T1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN5314DW1T1G from ON Semiconductor is a complementary bias resistor transistor (BRT) featuring one NPN and one PNP transistor in a single package. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 2,241,375 pcs
$ Price Range: $0.20

MUN5314DW1T1G Available from 4 distributors

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Flip Electronics ✓
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2,212,929 pcs
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2212929 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
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25,020 pcs
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25020 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
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3,421 pcs
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Braun Electronic Components ✓
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5 pcs
$0.20 ℹ
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5 pcs $0.20
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0+ 0.20
1 On Request On Request On Request On Request On Request
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MUN5314DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5314DW1T1G Description

Short technical summary and product information.

The MUN5314DW1T1G is a digital transistor from ON Semiconductor, designed to replace a single transistor and its external bias resistor network. This device integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor, simplifying circuit design and reducing board space.

 

Key electrical specifications include a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. The transistor type is a dual configuration with one NPN and one PNP transistor, both pre-biased. It features a typical DC current gain (hFE) of 80 at 5mA and 10V, with a Vce saturation of 250mV at 300µA and 10mA. The integrated base-emitter resistor has a nominal value of 47kΩ.

 

This component is housed in a compact SC-88/SC70-6/SOT-363 package, suitable for surface mounting. The power dissipation is rated at 250mW at 25°C ambient temperature when both junctions are heated. The device is Pb-Free and Halogen Free, complying with RoHS standards.

 

The use of a BRT like the MUN5314DW1T1G can reduce system cost and component count, making it ideal for applications where space and efficiency are critical.

MUN5314DW1T1G Quick Information

Product Type: Transistor Array, Pre-Biased
Canonical Name: NPN and PNP Transistor with Monolithic Bias Resistor Network
Subcategory: Transistor Arrays, Pre-Biased

MUN5314DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5314DW1T1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5314DW1T1G Features

  • Dual NPN and PNP pre-biased transistors.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 47kΩ base-emitter resistor.
  • Compact SC-88 surface mount package.

MUN5314DW1T1G Applications

  • Simplifies digital circuit designs.
  • Reduces component count on PCBs.
  • Ideal for space-constrained applications.
  • Replaces discrete transistor and resistor networks.

MUN5314DW1T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MUN5314DW1T1G?

The maximum collector-emitter voltage (Vceo) for the MUN5314DW1T1G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (Ic) rating for this transistor array is 100 mAdc.

What type of transistors are included in the MUN5314DW1T1G array?

The MUN5314DW1T1G contains one NPN and one PNP transistor, both pre-biased.

What is the package type for the MUN5314DW1T1G?

The MUN5314DW1T1G is supplied in an SC-88/SC70-6/SOT-363 package suitable for surface mounting.

What is the power dissipation of the MUN5314DW1T1G at 25°C?

The power dissipation is 250mW at 25°C ambient temperature when both junctions are heated.

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