MUN5313DW1T1G The ON Semiconductor MUN5313DW1T1G is a dual NPN/PNP pre-biased transistor designed for simplified circuit design and reduced board space. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MUN5313DW1T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MUN5313DW1T1G is a dual NPN/PNP pre-biased transistor designed for simplified circuit design and reduced board space. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 31,570 pcs
$ Price Range: $0.99

MUN5313DW1T1G Available from 3 distributors

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MUN5313DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Input Voltage
Mounting Type
Power
Power Dissipation
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MUN5313DW1T1G Description

Short technical summary and product information.

The MUN5313DW1T1G from ON Semiconductor is a complementary bias resistor transistor (BRT) series, integrating NPN and PNP transistors with monolithic bias resistor networks. This design eliminates external resistors, reducing system cost and board space.

 

Key electrical specifications include a 50V collector-emitter voltage and a continuous collector current of 100mA. The device also features a minimum DC current gain (hFE) of 80 at 5mA and 10V, and a Vce saturation of 250mV at 300µA and 10mA. It operates within a temperature range of -55°C to +150°C.

 

The transistor is housed in a compact SOT-363 (SC-88/SC70-6) surface-mount package, making it suitable for space-constrained applications. The device is Pb-Free and Halogen Free, complying with RoHS standards.

 

This series simplifies circuit design by replacing a single device and its external bias resistor network with a single component. The integrated resistors consist of a series base resistor and a base-emitter resistor, with typical values of 47kΩ for R1 and R2.

MUN5313DW1T1G Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: Dual NPN/PNP Pre-Biased Transistor
Subcategory: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

MUN5313DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5313DW1T1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5313DW1T1G Features

  • Dual NPN and PNP transistors integrated.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-363 surface-mount package.
  • Pb-Free and Halogen Free compliant.

MUN5313DW1T1G Applications

  • Simplifies circuit design and reduces component count.
  • Ideal for space-constrained applications.
  • Replaces single transistor and external resistors.
  • Suitable for digital logic applications.

MUN5313DW1T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MUN5313DW1T1G?

The collector-emitter voltage (VCEO) for the MUN5313DW1T1G is 50 Vdc.

What is the continuous collector current of the MUN5313DW1T1G?

The continuous collector current (IC) for the MUN5313DW1T1G is 100 mAdc.

What is the operating temperature range for this transistor?

The operating temperature range for the MUN5313DW1T1G is from -55 °C to +150 °C.

What package type is the MUN5313DW1T1G supplied in?

The MUN5313DW1T1G is supplied in a SOT-363 package.

Is the MUN5313DW1T1G RoHS compliant?

Yes, the MUN5313DW1T1G is RoHS3 Compliant.

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