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MUN5312DW1T2G The MUN5312DW1T2G is a complementary NPN and PNP transistor array from On Semiconductor, featuring integrated bias resistors for simplified circuit design. It is housed in a compact SOT-363 package.
Mfr Part #:

MUN5312DW1T2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN5312DW1T2G is a complementary NPN and PNP transistor array from On Semiconductor, featuring integrated bias resistors for simplified circuit design. It is housed in a compact SOT-363 package.
✓ Total Stock: 321,000 pcs
$ Price Range: $0.99

MUN5312DW1T2G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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321,000 pcs
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MUN5312DW1T2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MUN5312DW1T2G Description

Short technical summary and product information.

This On Semiconductor MUN5312DW1T2G is a digital transistor designed to replace a single device and its external resistor bias network. It contains NPN and PNP transistors with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor, each with a nominal value of 22kΩ. This integration simplifies circuit design, reduces board space, and lowers component count.

 

The device offers a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The DC current gain (hFE) is a minimum of 60 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA. The total power dissipation is rated at 385mW at 25°C ambient temperature when both junctions are heated.

 

Packaged in a surface-mount SOT-363 (SC-88/SC70-6) case, the MUN5312DW1T2G is suitable for applications requiring compact component footprints. It is Pb-Free and Halogen Free, complying with modern environmental standards. The standard package quantity is 3,000 units on tape and reel.

MUN5312DW1T2G Quick Information

Product Type: Pre-Biased Transistor Array
Canonical Name: NPN and PNP Transistors with Monolithic Bias Resistor Network
Subcategory: Pre-Biased

MUN5312DW1T2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5312DW1T2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5312DW1T2G Features

  • NPN and PNP transistors integrated.
  • Monolithic bias resistor network included.
  • Collector-Emitter Voltage: 50V.
  • Continuous Collector Current: 100mA.
  • Compact SOT-363 surface mount package.

MUN5312DW1T2G Applications

  • Simplifies digital circuit designs.
  • Reduces component count on PCBs.
  • Ideal for space-constrained applications.
  • Used in logic level shifting.
  • Suitable for general switching tasks.

MUN5312DW1T2G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) for the MUN5312DW1T2G?

The maximum collector-emitter voltage (VCEO) for the MUN5312DW1T2G is 50 Vdc.

What is the continuous collector current (IC) rating?

The continuous collector current (IC) rating is 100 mAdc.

What is the integrated resistor value in the MUN5312DW1T2G?

The integrated bias resistors in the MUN5312DW1T2G have a nominal value of 22 kΩ.

What package type is the MUN5312DW1T2G supplied in?

The MUN5312DW1T2G is supplied in a SOT-363 package, also known as SC-88 or SC70-6.

What is the RoHS status of the MUN5312DW1T2G?

The MUN5312DW1T2G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1.

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