DistyParts Icon
MUN5312DW1T1G The ON Semiconductor MUN5312DW1T1G is a complementary NPN and PNP bipolar transistor with integrated bias resistors. It is designed to simplify circuit design and reduce board space.
Mfr Part #:

MUN5312DW1T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MUN5312DW1T1G is a complementary NPN and PNP bipolar transistor with integrated bias resistors. It is designed to simplify circuit design and reduce board space.
✓ Total Stock: 31,584 pcs
$ Price Range: $0.99

MUN5312DW1T1G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
25,020 pcs
On Request
25020 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
5,440 pcs
On Request
5440 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,124 pcs
On Request
1124 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MUN5312DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Input Voltage
Lead Style
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
View Similar Products (0)

MUN5312DW1T1G Description

Short technical summary and product information.

The MUN5312DW1T1G from ON Semiconductor is a digital transistor featuring a complementary NPN and PNP pair with monolithic bias resistors. This pre-biased transistor integrates two resistors, a series base resistor and a base-emitter resistor, into a single device, eliminating the need for external components and reducing system cost and board space.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The integrated resistors have a typical value of 22kΩ. The transistor exhibits a minimum DC current gain (hFE) of 60 at 5mA and 10V, with a saturation voltage (Vce Sat) of 250mV maximum at 300µA base current and 10mA collector current.

 

This device is housed in a compact SC-88/SC70-6/SOT-363 surface-mount package, making it suitable for applications where space is limited. It operates within a temperature range of -55°C to +150°C. The MUN5312DW1T1G is Pb-free and Halogen-free, complying with RoHS standards.

MUN5312DW1T1G Quick Information

Product Type: Transistor
Series: MUN5312DW1
Canonical Name: Dual Complementary Bias Resistor Transistor
Subcategory: Pre-Biased Transistor

MUN5312DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5312DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5312DW1T1G Features

  • Dual NPN and PNP transistors with integrated resistors.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 22kΩ bias resistors.
  • Compact SOT-363 surface-mount package.

MUN5312DW1T1G Applications

  • Simplifies digital circuit designs.
  • Reduces component count and board space.
  • Ideal for space-constrained applications.
  • Used in switching and logic circuits.

MUN5312DW1T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MUN5312DW1T1G?

The maximum collector-emitter voltage (VCEO) for the MUN5312DW1T1G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) for the MUN5312DW1T1G is 100 mAdc.

What are the integrated resistor values?

The integrated bias resistors (R1 and R2) for the MUN5312DW1T1G are typically 22kΩ each.

What is the package type for this transistor?

The MUN5312DW1T1G is supplied in a SOT-363 surface-mount package.

What is the operating temperature range?

The operating temperature range for this device is -55°C to +150°C.

Home
Account

Categories