| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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39,000 pcs
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39000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
22,020 pcs
|
22020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MUN5311DW1T2G is a complementary bipolar transistor array from ON Semiconductor, integrating NPN and PNP transistors with monolithic bias resistor networks. This design simplifies circuit design, reduces board space, and lowers component count by replacing individual transistors and resistors.
Key electrical specifications include a 50V collector-emitter voltage and a 100mA continuous collector current. The device features integrated resistors with a nominal value of 10kΩ, simplifying bias network implementation. It is supplied in a compact SOT-363 (SC-88) surface-mount package, making it suitable for space-constrained applications.
This transistor array is designed to replace single devices and their external resistor bias networks. The integrated bias resistors consist of a series base resistor and a base-emitter resistor, streamlining circuit construction. The device is also Pb-free and halogen-free, aligning with environmental compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the MUN5311DW1T2G is 50 Vdc.
The continuous collector current (IC) for the MUN5311DW1T2G is 100 mAdc.
The MUN5311DW1T2G is supplied in a SOT-363 package, also known as SC-88 or SC70-6.
The integrated bias resistors in the MUN5311DW1T2G have a nominal value of 10 kΩ.
The minimum DC current gain (hFE) is 35 at a collector current of 5mA and collector-emitter voltage of 10V.
The power dissipation is 250mW when both junctions are heated at 25°C, and 187mW when only one junction is heated at 25°C.