| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,250 pcs
|
3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
305 pcs
|
305 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MUN5311DW1T1G is a pre-biased bipolar transistor array designed to simplify circuit design by integrating resistors into a single package. This device contains one NPN and one PNP transistor, each with internal bias resistors.
Key electrical specifications include a 50V collector-emitter breakdown voltage and a 100mA continuous collector current. The power dissipation is rated at 250mW. It features integrated resistors with nominal values of 10kΩ for both R1 (base) and R2 (base-emitter).
The transistor array has a minimum DC current gain (hFE) of 35 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA collector current and 10mA base current. Input forward voltage is 40Vdc and input reverse voltage is 10Vdc.
This component is supplied in a surface mount SC-88/SC70-6/SOT-363 package, making it suitable for space-constrained applications. The standard package quantity is 3000 units per tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The maximum power dissipation is 250mW.
The internal resistors R1 and R2 both have a nominal value of 10 kΩ.
The device is supplied in a 6-TSSOP, SC-88, SOT-363 package.