| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,762 pcs
|
8762 pcs | On Request | 1 | On Request | On Request | 0042+ | On Request | On Request |
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| Tape & Reel | |
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The MUN5311DW1T1 from ON Semiconductor is a dual bias resistor transistor (BRT) series, featuring two complementary BRT devices in a single SOT-363 package. This design simplifies circuit construction, reduces board space, and lowers component count by integrating a transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor.
Key electrical specifications include a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA. The integrated resistors have a nominal value of 10kΩ. The device offers a minimum DC current gain (hFE) of 35 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA.
With a total device dissipation of 385mW at 25°C (both junctions heated) and a thermal resistance of 325°C/W (junction-to-ambient), this transistor is suitable for low power applications. It operates within a junction and storage temperature range of -55°C to +150°C.
The MUN5311DW1T1 is housed in a compact SOT-363 (SC-88/SC70-6) surface mount package, ideal for space-constrained designs. It is supplied on tape and reel in standard quantities of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN5311DW1T1 is 50 Vdc.
The MUN5311DW1T1 transistor can handle a maximum collector current (IC) of 100 mAdc.
The integrated base resistor value for the MUN5311DW1T1 is 10kΩ.
The junction and storage temperature range for the MUN5311DW1T1 is -55°C to +150°C.
The MUN5311DW1T1 is supplied in a SOT-363 package.