| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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315,000 pcs
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315000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MUN5241T1G is a pre-biased NPN transistor manufactured by ON Semiconductor. This device integrates a single transistor with a monolithic bias network, simplifying circuit design and reducing board space. It is designed to replace a single device and its external resistor bias network.
Key electrical specifications include a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. It also features a base resistor (R1) of 100 kΩ. The transistor type is NPN - Pre-Biased, with a DC current gain (hFE) of 160 minimum at 5mA and 10V, and a Vce saturation of 250mV maximum at 5mA and 10mA.
The MUN5241T1G is supplied in a Surface Mount package, specifically the SC-70-3 (SOT323) case. This compact package is suitable for applications where board space is limited. The device is rated for a power dissipation of 200mW.
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN5241T1G is 50 Vdc.
The continuous collector current (IC) rating for the MUN5241T1G is 100 mAdc.
The integrated base resistor (R1) value is 100 kΩ.
The MUN5241T1G is supplied in an SC-70-3 (SOT323) package suitable for surface mounting.