| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,820 pcs
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2820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The MUN5236DW1T1G is a Dual NPN Bias Resistor Transistor (BRT) from ON Semiconductor, designed to simplify circuit design by integrating a transistor with a monolithic bias resistor network. This device replaces a single transistor and its external resistors, reducing system cost and board space.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It also features a pre-biased resistor network with a nominal resistance of 100kΩ. The transistor type is 2 NPN - Pre-Biased (Dual), with a DC current gain (hFE) of 80 minimum at 5mA, 10V and a Vce saturation of 250mV maximum at 300µA, 10mA.
This component is supplied in a SOT-363 package, also known as SC-88 or SC70-6, and is designed for surface mount applications. The datasheet specifies a power dissipation of 256mW (one junction heated) or 385mW (both junctions heated) at 25°C ambient temperature. It is also noted as Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
The use of BRTs can reduce component count and simplify circuit layouts, making them suitable for various digital applications where space and cost are critical factors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MUN5236DW1T1G is 50 Vdc.
The continuous collector current (IC) rating for this transistor array is 100 mAdc.
The MUN5236DW1T1G features an integrated resistor with a nominal value of 100kΩ.
This device is supplied in a SOT-363 package, also referred to as SC-88 or SC70-6.
Yes, the MUN5236DW1T1G is RoHS3 Compliant.