| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
95,758 pcs
|
95758 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
3,539 pcs
|
3539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
190 pcs
|
190 pcs | On Request | 1 | On Request | On Request | 16+/1433 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MUN5235T1G from ON Semiconductor is a digital transistor featuring a monolithic bias resistor network. This integrated design replaces a single transistor and its external resistors, simplifying circuit design and reducing board space.
Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It also has a nominal base-emitter resistor value of 47 kΩ. The transistor type is NPN - Pre-Biased, with a DC current gain (hFE) of at least 80 at 5mA and 10V.
This device is supplied in a surface mountable SC-70-3 (SOT323) package, making it suitable for compact electronic designs. The maximum power dissipation is rated at 200 mW.
The MUN5235T1G is designed to replace discrete components and their associated bias networks, offering a cost-effective and space-saving solution for various digital applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
It is supplied in an SC-70-3 (SOT323) package.
The base-emitter resistor value is 47 kΩ.
The minimum DC current gain (hFE) is 80 at 5mA and 10V.