| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
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| Tape & Reel | |
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The ON Semiconductor MUN5235T1 is a pre-biased NPN bipolar junction transistor (BJT) designed for surface mount applications. This device integrates a transistor with a monolithic bias resistor network, simplifying circuit design and reducing board space. It features a maximum collector-emitter voltage of 50Vdc and a maximum collector current of 100mAdc.
The transistor has a nominal resistance of 47 kΩ and a DC current gain (hFE) of at least 80 at 5mA collector current and 10V Vce. The saturation voltage (Vce Sat) is a maximum of 250mV at 1mA base current and 10mA collector current. The device is rated for a power dissipation of 202 mW at 25°C ambient temperature on a minimum pad, or 310 mW on a 1.0 x 1.0 inch pad.
Packaged in an SC-70-3 (SOT-323) surface mount package, the MUN5235T1 is suitable for low-power applications. The junction and storage temperature range is -55°C to +150°C. This component is RoHS3 compliant and MSL 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
It is packaged in a SC-70, SOT-323 surface-mount package.
The maximum collector current is 100 mAdc.
-55°C to +150°C.
Yes, it is RoHS3 compliant.
Yes, it is Pb-Free.