MUN5235DW1T1G The On Semiconductor MUN5235DW1T1G is a dual NPN pre-biased bipolar transistor array. It offers a 50V collector-emitter breakdown voltage and 100mA continuous collector current.
Mfr Part #:

MUN5235DW1T1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MUN5235DW1T1G is a dual NPN pre-biased bipolar transistor array. It offers a 50V collector-emitter breakdown voltage and 100mA continuous collector current.
✓ Total Stock: 291,474 pcs
$ Price Range: $0.99

MUN5235DW1T1G Available from 4 distributors

✓ Authorised
✓ Non-Authorised

MUN5235DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MUN5235DW1T1G Description

Short technical summary and product information.

The MUN5235DW1T1G from On Semiconductor is a dual NPN bias resistor transistor (BRT) designed to simplify circuit design and reduce board space. This device integrates a single transistor with a monolithic bias network, consisting of a series base resistor (R1 = 2.2 kΩ) and a base-emitter resistor (R2 = 47 kΩ).

 

Key electrical specifications include a 50V collector-emitter breakdown voltage and a 100mA continuous collector current. The device also features a 250mW power dissipation rating at 25°C and a Vce saturation of 250mV at 300µA, 10mA.

 

Packaged in a compact SOT-363 surface mount package, the MUN5235DW1T1G is suitable for applications where space is a constraint. It is RoHS3 compliant, Pb-Free, and Halogen Free.

 

This series of digital transistors is designed to replace a single device and its external resistor bias network, reducing component count and system cost.

MUN5235DW1T1G Quick Information

Product Type: Transistor Array
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Pre-Biased

MUN5235DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MUN5235DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5235DW1T1G Features

  • Dual NPN pre-biased transistor array.
  • Integrated bias resistors R1=2.2kΩ, R2=47kΩ.
  • 50V collector-emitter breakdown voltage.
  • 100mA continuous collector current.
  • SOT-363 surface mount package.

MUN5235DW1T1G Applications

  • Simplifies circuit design.
  • Reduces board space.
  • Reduces component count.
  • Suitable for digital logic circuits.

MUN5235DW1T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the MUN5235DW1T1G?

The collector-emitter breakdown voltage is 50V.

What is the continuous collector current for the MUN5235DW1T1G?

The continuous collector current is 100mA.

What is the power dissipation of the MUN5235DW1T1G?

The power dissipation is 250mW at 25°C.

What package type is the MUN5235DW1T1G available in?

The MUN5235DW1T1G is available in a SOT-363 package.

Is the MUN5235DW1T1G RoHS compliant?

Yes, the MUN5235DW1T1G is RoHS3 compliant.

What are the integrated resistor values in the MUN5235DW1T1G?

The integrated resistors are R1 = 2.2 kΩ and R2 = 47 kΩ.

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