| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MUN5234DW1T1G is a Dual NPN Bias Resistor Transistor (BRT) from ON Semiconductor, designed to simplify circuit design by integrating a transistor with a monolithic bias network. This device offers a collector-emitter voltage of 50V and a continuous collector current of 100mA.
Key electrical specifications include a maximum power dissipation of 250mW and a Vce saturation of 250mV at 1mA/10mA. It also features a DC current gain (hFE) of 80 minimum at 5mA/10V and a collector cutoff current of 500nA.
The transistor is housed in a compact SOT-363 package, suitable for surface mounting. It operates within a junction and storage temperature range of -55 to +150°C. The device is Pb-Free, Halogen Free, and RoHS Compliant.
This series of digital transistors is designed to replace single devices and their external resistor bias networks, reducing system cost and board space. The integrated bias network consists of a series base resistor and a base-emitter resistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 50V.
The maximum continuous collector current is 100mA.
The maximum power dissipation is 250mW.
It is supplied in a SOT-363 package.
Yes, the MUN5234DW1T1G is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The junction and storage temperature range is -55 to +150°C.