| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
328,020 pcs
|
328020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,335 pcs
|
4335 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Power | |
| Resistor | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The On Semiconductor MUN5233T1G is a digital transistor featuring a monolithic bias resistor network, designed to simplify circuit design and reduce component count. This NPN pre-biased transistor offers a collector-emitter voltage of 50V and a continuous collector current of 100mA.
Key electrical characteristics include a DC current gain (hFE) of 80 minimum at 5mA collector current and 10V Vce, and a Vce saturation of 250mV maximum at 1mA base current and 10mA collector current. It includes a nominal base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 47 kΩ.
The device is supplied in an SC-70-3 (SOT323) package, suitable for surface mounting. It is rated for a power dissipation of 202mW. The transistor is Pb-Free and Halogen Free, with a RoHS3 compliance status.
This series of digital transistors integrates a single transistor with its external bias resistor network, making it an efficient solution for applications requiring reduced board space and component count.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the MUN5233T1G is 50V.
The continuous collector current for the MUN5233T1G is 100 mA.
The MUN5233T1G is available in an SC-70, SOT-323 package.
The power dissipation for the MUN5233T1G is 202 mW.
The DC current gain (hFE) of the MUN5233T1G is a minimum of 80 at 5mA collector current and 10V Vce.
The MUN5233T1G has a nominal base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 47 kΩ.