MUN5231T1G The MUN5231T1G from ON Semiconductor is an NPN pre-biased bipolar transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MUN5231T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MUN5231T1G from ON Semiconductor is an NPN pre-biased bipolar transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Total Stock: 84,000 pcs
$ Price Range: $0.99

MUN5231T1G Available from 2 distributors

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57,000 pcs
57000 pcs On Request 1 On Request On Request On Request On Request On Request
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27,000 pcs
27000 pcs On Request 1 On Request On Request On Request On Request On Request

MUN5231T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency - Transition
Mounting Type
Power
Resistor
Resistor - Emitter Base (R2)
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MUN5231T1G Description

Short technical summary and product information.

The MUN5231T1G is an NPN pre-biased bipolar transistor manufactured by ON Semiconductor. This device integrates a transistor with a monolithic bias resistor network, simplifying circuit design and reducing component count. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA.

 

The transistor includes integrated resistors with a nominal value of 2.2 kOhms for both base (R1) and base-emitter (R2). It offers a minimum DC current gain (hFE) of 8 at 5mA collector current and 10V Vce. The saturation voltage (Vce Sat) is a maximum of 250mV at 5mA base current and 10mA collector current. The transition frequency is 250 MHz.

 

This component is supplied in a surface mount SC-70-3 (SOT-323) package, making it suitable for compact electronic designs. The device is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.

MUN5231T1G Quick Information

Product Type: NPN Pre-Biased Transistor
Canonical Name: MUN5231T1G NPN Pre-Biased Transistor
Subcategory: Bipolar (BJT)

MUN5231T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MUN5231T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MUN5231T1G Features

  • NPN pre-biased bipolar transistor.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 2.2 kOhm resistors.
  • Surface mount SC-70-3 (SOT-323) package.

MUN5231T1G Applications

  • Simplifies circuit design.
  • Reduces component count.
  • Suitable for compact designs.
  • Digital logic applications.

MUN5231T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MUN5231T1G?

The collector-emitter voltage is 50 Vdc.

What is the continuous collector current of the MUN5231T1G?

The continuous collector current is 100 mAdc.

What are the integrated resistor values in the MUN5231T1G?

The integrated resistors (R1 and R2) are both 2.2 kOhms.

What is the minimum DC current gain (hFE) for the MUN5231T1G?

The minimum DC current gain (hFE) is 8 at 5mA collector current and 10V Vce.

What is the saturation voltage (Vce Sat) of the MUN5231T1G?

The saturation voltage (Vce Sat) is a maximum of 250mV at 5mA base current and 10mA collector current.

What package type is the MUN5231T1G supplied in?

The MUN5231T1G is supplied in a surface mount SC-70-3 (SOT-323) package.

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